Instrumentation and measurement
Learn more about Hall effect measurements of low-mobility materials
May 11, 2018
The traditional DC field Hall measurement methodology, while sufficient for studying a wide range of materials, is limited to measuring Hall mobilities down to about 1 cm2/V s—making it impossible to measure materials that are characterized by very low mobilities.
This white paper explores the use of the AC field Hall measurement method for expanding the measurement range. It examines the DC and AC field Hall protocols then provides examples of AC field Hall used for analyzing:
- Transparent oxide materials
- Micro-crystalline silicon materials
- Bismuth vanadate (BiVO4) metal oxides
- Various other materials
About the Author
Jeffrey Lindemuth, a Senior Scientist with Lake Shore Cryotronics, received his BSc in Physics from Penn State University and his PhD in High Energy Physics from the College of William and Mary in 1982, where his research concentrated on the study of weak and strong interactions through the measurements of exotic atom x-rays. Before Lake Shore, Dr. Lindemuth was with EG&G Princeton Applied Research, concentrating on computer-aided measurements and data analysis for electrochemistry, optical spectroscopy, fiber optics, magnetic materials, and high-speed electronics. He later became Director of R&D for the company. Since joining Lake Shore in 1993, his focus has been in the development of magnetic measurement systems, including VSMs and AC susceptibility measurements as well as Hall systems and data analysis. In addition, Dr. Lindemuth is widely recognized as an expert in instrumentation and methods for Hall measurements, particularly in semiconductor materials.